Physics Based Virtual Source Compact Model of Gallium-Nitride High Electron Mobility Transistors
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منابع مشابه
A Compact Transport and Charge Model for GaN-based High Electron Mobility Transistors for RF applications
Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are rapidly emerging as front-runners in high-power mm-wave circuit applications. For circuit design with current devices and to allow sensible future performance projections from device engineering in such a rapidly evolving technology, compact device models are essential. In this thesis, a physics-based compact model is de...
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